Compartir
Gallium Oxide: Materials Properties, Crystal Growth, and Devices (en Inglés)
Higashiwaki, Masataka ; Fujita, Shizuo (Autor)
·
Springer
· Tapa Blanda
Gallium Oxide: Materials Properties, Crystal Growth, and Devices (en Inglés) - Higashiwaki, Masataka ; Fujita, Shizuo
$ 313.528
$ 391.909
Ahorras: $ 78.382
Elige la lista en la que quieres agregar tu producto o crea una nueva lista
✓ Producto agregado correctamente a la lista de deseos.
Ir a Mis Listas
Origen: Estados Unidos
(Costos de importación incluídos en el precio)
Se enviará desde nuestra bodega entre el
Lunes 17 de Junio y el
Lunes 01 de Julio.
Lo recibirás en cualquier lugar de Argentina entre 1 y 3 días hábiles luego del envío.
Reseña del libro "Gallium Oxide: Materials Properties, Crystal Growth, and Devices (en Inglés)"
This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga₂O₃). Ga₂O₃ has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga₂O₃ is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community.Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga₂O₃.
