Compartir
amorphous and crystalline silicon carbide and related materials: proceedings of the first international conference, washington dc, december 10 and 11, (en Inglés)
Gary L. Harris
(Ilustrado por)
·
Cary Y. -W Yang
(Ilustrado por)
·
Springer
· Tapa Blanda
amorphous and crystalline silicon carbide and related materials: proceedings of the first international conference, washington dc, december 10 and 11, (en Inglés) - Harris, Gary L. ; Yang, Cary Y. -W
$ 159.220
$ 227.457
Ahorras: $ 68.237
Elige la lista en la que quieres agregar tu producto o crea una nueva lista
✓ Producto agregado correctamente a la lista de deseos.
Ir a Mis Listas
Origen: Estados Unidos
(Costos de importación incluídos en el precio)
Se enviará desde nuestra bodega entre el
Lunes 10 de Junio y el
Lunes 24 de Junio.
Lo recibirás en cualquier lugar de Argentina entre 1 y 3 días hábiles luego del envío.
Reseña del libro "amorphous and crystalline silicon carbide and related materials: proceedings of the first international conference, washington dc, december 10 and 11, (en Inglés)"
Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.